In this paper, Al-doped ZnO thin film transistors (AZO-TFT) were fabricated by the thermal evaporation growth of AZO channel layer on a silicon substrate at temperatures below 250℃. A SiO2 dielectric layer grown by the horizontal furnace was used as a gate. An active layer thickness of 10nm was measured by Atomic Force Microscopy (AFM), and its surface had root mean square (rms) roughness 12.688 nm, and crystallize height between 81.081 nm ~ 41.285 nm.
