勤益科大機構典藏:Item 987654321/4057
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    Please use this identifier to cite or link to this item: http://ir.lib.ncut.edu.tw/handle/987654321/4057


    Title: A Robust Data Retention Characteristic of Sol-gel Derived Nanocrystal Memory by Hot Hole Trapping
    Authors: 游信強
    Contributors: 電子工程(學)系
    Date: 2010-05
    Issue Date: 2013-07-03 14:40:08 (UTC+8)
    Publisher: New York, NY : Institute of Electrical and Electronics Engineers
    Relation: IEEE Electron Device Letters
    Appears in Collections:[Department of Electronic Engineering] 【電子工程系所】期刊論文

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