An Na source via Mo Naintermediate layer for three stage evaporation of Cu(In,Ga)Se2 solar cells.

勤益科大機構典藏 > 工程學院 > 機械工程系(所) > 【機械工程系】期刊論文 > Item 987654321/5814

請使用永久網址來引用或連結此文件: http://ir.lib.ncut.edu.tw/handle/987654321/5814

題名:	An Na source via Mo Naintermediate layer for three stage evaporation of Cu(In,Ga)Se2 solar cells.
作者:	Huan-Hsin Sung, Du-Cheng Tsai, Zue-Chin Chang, Shih-Chang Liang, Fuh-Sheng Shieu
貢獻者:	圖書館
關鍵詞:	SIMS CIGS solar cell MoNa thin film
日期:	2015-11
上傳時間:	2016-10-14 09:06:25 (UTC+8)
摘要:	In this study, an Na source was integrated into the back contact stack, which is a MoNa layer. MoNa layers with varying thicknesses were deposited on Al2O3 substrate as intermediate layers of an Mo back contact by DC magnetron sputtering of a Mo-10 at% Na target. We examined the effect of MoNa thickness on the standard production of Cu(In, Ga)Se2 (CIGS) solar cell fabricated using three-stage evaporation. The structure of the MoNa layer was composed of fibers with considerably small grain size (~5 nm). By contrast, the Mo layer presented a columnar structure with relatively large grain size. The Na concentration in the CIGS absorber can be adjusted by varying the thickness of the MoNa layer. Cell efficiency was heavily raised from 2.08% to 11.7% using MoNa layer as Na source. However, the enhanced deliquescence property with MoNa thickness limited further improvement in cell efficiency.
關聯:	Materials Science in Semiconductor Processing
顯示於類別:	[機械工程系(所)] 【機械工程系】期刊論文

文件中的檔案:

檔案	描述	大小	格式	瀏覽次數
An Na source via Mo Naintermediate layer for three stage evaporation of Cu(In,Ga)Se2 solar cells..pdf		1615Kb	Adobe PDF	2211	檢視/開啟

檢視Licence

在NCUTIR中所有的資料項目都受到原著作權保護.