Using Positive Pressure to produce a Sub-micron Single-Crystal Column of Cesium Iodide (CsI) for Scintillator Formation

NCUTIR > College of Engineering > Department of Mechanical Engineering > 【機械工程系】期刊論文 > Item 987654321/5819

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Title:	Using Positive Pressure to produce a Sub-micron Single-Crystal Column of Cesium Iodide (CsI) for Scintillator Formation
Authors:	Chih Yuan Chen, Shih Hsun Chen, Chien Chon Chen , Jin Shyong Lin
Contributors:	圖書館
Keywords:	Material Cesium iodide Positive pressure Ceramic Single-crystal
Date:	2015-06-01
Issue Date:	2016-10-14 09:22:52 (UTC+8)
Abstract:	The scintillator can be directly coupled to a commercial CCD and has the fastest response time (several ns) for real-time radiography. Most scintillator material production uses an expensive vacuum deposition process or a single-crystal growth method. This work reports the development of a cost-effective way to prepare sub-micron scintillator cesium iodide (CsI) columns in a ceramic anodic aluminum oxide (AAO) template by a positive pressure penetration method. Positive pressure can decrease the iodine vapor pressure and increase the CsI sublimation point up to the CsI melting point. Because the CsI melt is confined to an AAO channel with a high aspect ratio, the melt easily solidifies into a stable single-crystal CsI column. The SEM images showed CsI in a single crystal with a column diameter of 440 nm, smooth surfaces, and no grain boundaries. This positive pressure penetration method enables fabrication of a single-crystal CsI column with controllable size.
Relation:	Materials Letters
Appears in Collections:	[Department of Mechanical Engineering] 【機械工程系】期刊論文

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