Analysis and Processing of Power Output Signal of 200V Power Devices

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题名:	Analysis and Processing of Power Output Signal of 200V Power Devices
作者:	Yang, Cheng-Yen Wu ； Hsin-Chiang You ； Chen-Chung Liu ； Wen-Luh
贡献者:	圖書館
关键词:	200 V SOI Breakdown Voltage Power Devices
日期:	2015-03-01
上传时间:	2016-10-17
摘要:	In the development of semiconductors, power devices have more and more applications. In addition to today's popular PC and smartphone. LED energy-saving development must rely on the power devices. In this study, the design direction is focused on 200 V power devices. In addition, this device can be used in consumer electronics products, and it will be the next focused design points to be improved. The same production process technology is applied on fabricating the devices in the silicon substrate and the SOI substrate to explore the difference between both devices in the electric potential, electric field, the depletion region and breakdown voltage.
關聯:	Information Engineering
显示于类别:	[電子工程系(所)] 【電子工程系所】期刊論文

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