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    题名: Transistor characteristics of zinc oxide active layers at various zinc acetate dihydrate solution concentrations of zinc oxide thin-film
    作者: You, H.C.
    贡献者: 圖書館
    关键词: ZnO
    Zinc acetate dihydrate solution
    Thin-film transistor
    Concentration
    日期: 2015-05
    上传时间: 2016-10-17 09:26:53 (UTC+8)
    摘要: This paper presents a technique involving a sol-gel deposition method applied to the deposition of zinc oxide thin film for a transistor as a semiconductor layer. This method was used for manufacturing the essential thin films of II-VI semiconductors. Zinc oxide (ZnO) bottom-gate (BG) thin-film transistors (TFTs) have been successfully fabricated at low temperatures. We investigated the electrical characteristics of ZnO thin-film transistors at various concentrations of ZnO solution: 0.02 M, 0.03 M, 0.04 M, and 0.05 M. All of the ZnO films exhibited a hexagonal wurtzite polycrystalline structure with (002) preferred orientation. Atomic force microscopy (AFM) revealed the formation of grains or clusters as a result of the accumulation of nanoparticles, and the grain size increased with increasing solution concentration. The coated ZnO films were employed as the active channel layer in thin-film transistors, and the impact of the solution concentration on the device performance was examined. As the solution concentration was increased, the field-effect mobility increased from 1 × 10–4 cm2/V-s to 1.2 × 10–1 cm2/V-s, the threshold voltage increased from 4.8 V to 11.1 V, and the Ion/Ioff ratio increased from 104 to 106. The on-off ratio (Ion/off) was found to be 106. The 0.05 M ZnO solution performed optimally.
    關聯: Journal of Applied Research and Technology Volume 13, Issue 2, Pages 291–296
    显示于类别:[電子工程系(所)] 【電子工程系所】期刊論文

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