P-Channel Gd2O3 Trapping Layer for SONOS-Type Flash Memory

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Title:	P-Channel Gd2O3 Trapping Layer for SONOS-Type Flash Memory
Authors:	Yu-Hsien Lin, Hsin-Chiang You , Jhih-Yong Hsu and Jyun-Han Li
Contributors:	圖書館
Keywords:	Flash memory gadolinium oxide nonvolatile memory p-channel
Date:	2015
Issue Date:	2016-10-17 09:31:02 (UTC+8)
Abstract:	This paper proposes and demonstrates a p-channel SONOS-type memory based on a high-κ dielectric material gadolinium oxide (Gd2O3) trapping layer. In the proposed design, we used band-to-band hot electron injection for programming, and channel hot- hole injection for erasing through a highly efficient charge storage device operation. The proposed design has a total memory window of 11V, 10-year Vt retention window with approximately 9% charge loss, and sufficient memory window for 104 programming/erasing cycles of endurance. The proposed p-channel SONOS-type Gd2O3 trapping layer flash memory exhibits large memory windows, high program/erase speed, excellent endurance, and optimal disturbance characteristics.
Relation:	Applied Mathematics & Information Sciences
Appears in Collections:	[Department of Electronic Engineering] 【電子工程系所】期刊論文

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