勤益科大機構典藏:Item 987654321/6615
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    Please use this identifier to cite or link to this item: http://ir.lib.ncut.edu.tw/handle/987654321/6615


    Title: Improve the Efficiency of Silicon Solar Cells by ITO-Silver Electrode Structure
    Authors: 鄭文達
    Contributors: 機械工程(學)系
    Date: 2011-08
    Issue Date: 2017-11-14 10:11:51 (UTC+8)
    Abstract: In this study, Indium Tin Oxide thin film composite nano silver film was used to replace the positive silver gate-like electrodes commonly use by silicon solar cells. The study aimed to increasing the area of light absorption for silicon solar cells thereby enhance the solar cell optoelectronic conversion efficiency. The experiment adopted sol-gel solution containing phosphorus which was used as the source of phosphorus dopant. The solution was spin-coated on single crystal silicon, followed by high temperature annealing to form p-n junction. This substrate was coated with nano silver film of different thicknesses, while the coating of Indium Tin Oxide with thickness of 450nm was used as the front electrode, to increase solar cell efficiency. The study proposed an appropriate thickness of nano silver film which could effectively improve the diode properties of components and provide better efficiency for solar cells with such structure.
    Relation: ECS Transactions
    Appears in Collections:[Department of Mechanical Engineering] 【機械工程系】期刊論文

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