勤益科大機構典藏:Item 987654321/2308
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    Please use this identifier to cite or link to this item: http://ir.lib.ncut.edu.tw/handle/987654321/2308


    Title: 以CCVD法生長奈米碳管之製程參數研究
    Authors: 謝忠祐;蔡國銘;鄭智銘;張玫玲;唐子驥
    Contributors: 機械工程系
    Department of Mechanical Engineering
    Keywords: 奈米碳管;CVD;催化劑
    Date: 2003-07
    Issue Date: 2008-12-23 10:26:33 (UTC+8)
    Publisher: 勤益科技大學
    Abstract: 催化劑化學氣相沈積法(Catalytic Chemical Vapor Deposition Method)是一種常用於生長奈米碳管的方法，本研究主要是建構一套化學氣相沈積設備，並對催化劑種類、附著方式、退火溫度與時間、生長溫度與時間做一系列的研究。由實驗結果可知，本系所製備之CVD設備已可成功地長出奈米碳管；當使用離子濺鍍方法所得之催化劑層較為細小均勻，而當退火溫度在850℃且生長溫度在1150℃時可得有限長度的奈米管，可以此為基礎進行更進一步的生長控制研究。
    Relation: 勤益學報 21(1) p.313-323
    Appears in Collections:[National CHIN-YI University of Technology] 勤益學報

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