勤益科大機構典藏:Item 987654321/5813
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    Please use this identifier to cite or link to this item: http://ir.lib.ncut.edu.tw/handle/987654321/5813


    Title: The Effect of Aging of ZnO, AZO, and GZO films on the Microstructure and Photoelectric Property
    Authors: Chang, Zue Chin
    Contributors: 圖書館
    Keywords: Aging
    films
    Microstructure
    Photoelectric Property
    Date: 2015
    Issue Date: 2016-10-14 09:03:24 (UTC+8)
    Abstract: RF magnetron sputtering is used on the ceramic targets, each of which contains zinc oxide (ZnO), zinc oxide doped with aluminum (AZO) and zinc oxide doped with gallium (GZO). The XRD analysis showed a preferred orientation along the (002) plane for ZnO, AZO, and GZO films. The AZO film had the best electrical properties; it had the lowest resistivity of 6.6 × 10-4 cm, the best sheet resistance of 2.2 × 10-1 Ω/square, and the highest carrier concentration of 4.3 × 1020 cm-3, as compared to the ZnO and GZO films.
    Relation: International Journal of Chemical
    Appears in Collections:[Department of Mechanical Engineering] 【機械工程系】期刊論文

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