This paper proposes and demonstrates a p-channel SONOS-type memory based on a high-κ dielectric material gadolinium oxide (Gd2O3) trapping layer. In the proposed design, we used band-to-band hot electron injection for programming, and channel hot- hole injection for erasing through a highly efficient charge storage device operation. The proposed design has a total memory window of 11V, 10-year Vt retention window with approximately 9% charge loss, and sufficient memory window for 104 programming/erasing cycles of endurance. The proposed p-channel SONOS-type Gd2O3 trapping layer flash memory exhibits large memory windows, high program/erase speed, excellent endurance, and optimal disturbance characteristics.
