勤益科大機構典藏:Item 987654321/6099
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    Please use this identifier to cite or link to this item: http://ir.lib.ncut.edu.tw/handle/987654321/6099


    Title: Indium Doping Concentration Effects in the Fabrication of Zinc-Oxide Thin-Film Transistors
    Authors: 游信強
    Contributors: 電子工程(學)系
    Date: 2013-07
    Issue Date: 2017-09-28 09:22:22 (UTC+8)
    Relation: International Journal of ELECTROCHEMICAL SCIENCE
    Appears in Collections:[Department of Electronic Engineering] 【電子工程系所】期刊論文

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